전계효과 2차원 트랜지스터의 전기적 측정 기법과 주요 파라미터 도출

• 영문명: Methodologies for Electrical Measurement and Parameter Analysis of 2D Semiconductor Transistors
• 발행기관: 한국세라믹학회
• 저자명: 권경우(Kyungwu Kwon) 이혜명(Hyemyeong Lee) 송승욱(Seunguk Song)
• 간행물 정보: 『세라미스트』제28권 제2호, 334~355쪽, 전체 22쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2025.06.30

국문 초록

Conventional silicon-based semiconductors face short‑channel effects and drain‑induced barrier lowering as channel dimensions of the Field-effect transistors (FETs) approach their physical limits. Two‑dimensional (2D) van der Waals semiconductors, such as Transition metal chalcogenides (TMCs), offer atomic‑scale thickness, self‑passivated surfaces, and high carrier mobility, presenting a promising path beyond silicon scaling. However, chalcogen vacancies in TMCs, interface traps, unintended doping, and Schottky contacts introduce variability and high contact resistance, challenging device reliability. In addition, accurate evaluation of electrical characteristics is critical because it ensures reliable comparison of device performance, while guiding material and process optimization for commercialization of 2D semiconductor technologies. Here, we introduce three key electrical measurement techniques for 2D channel FETs; (i) four‑terminal method, (ii) Hall measurement, and (iii) Transfer length method (TLM). We also review the various extraction methods for sheet resistance, carrier concentration, field‑effect mobility, and contact resistivity, and highlights their error sources and best practices. Our guidelines therefore help to enable reliable parameter extraction, providing reference metrics to enhance the accuracy and reproducibility of 2D device characterizations

목차

1. 서론

2. 본론

3. 결론

REFERENCES

키워드

Field effect mobility Four terminal method Hall measurement Schottky barrier height Transfer line method

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