플립칩 패키지에서의 일렉트로마이그레이션 현상

• 영문명: Electro-migration Phenomenon in Flip-chip Packages
• 발행기관: 한국마이크로전자및패키징학회
• 저자명: 이기주 김근수 K. Suganuma Katsuaki Suganuma
• 간행물 정보: 『마이크로전자 및 패키징학회지』제17권 제4호, 11~17쪽, 전체 7쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2010.12.31

영문 초록

The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

목차

1. 서론

2. 솔더접합부에서의 EM현상의 원인과 특징

3. 각종 무연솔더 접합부에서의 EM현상의 특징

4. Sn-Ag-Cu 접합부의 Sn 결정방향에 따른 EM 특성

5. 요약

참고문헌