RF 트랜지스터의 접합 금속화 구조와 소결 온도의 영향

• 영문명: The Effects of the Contact Metallization Structures and Sintering Temperatures for RF Transistor
• 발행기관: 한국산업기술융합학회(구. 산업기술교육훈련학회)
• 저자명: 최영길(Young-Gill Choi)
• 간행물 정보: 『산업기술연구논문지』산업기술교육훈련논문지 제18권 1호, 27~32쪽, 전체 6쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2013.03.30

영문 초록

This paper is discussed about the effects of several contact metallization structure of silicide and shallow junction, to reduce the base and emitter series resistance and protect the junction spike of RF transistor. This contact metallization structures have been composed with Al-1%Si, Al/TiW/PtSi2- silicide, Al/TiN/TiSi2-silicide, Al/TiSi2-silicide, Al/TiN/Ti on the emitter and base contact of RF transistor. These contact metallization of RF transistors, with silicide contacts and poly-silicon emitter, are electrically characterized by thermal stability and DC characteristics on the sintering temperature.

목차

Ⅰ. 서 론

Ⅱ. 실험

Ⅲ. 실험결과 및 고찰

Ⅳ. 결 론

키워드

Contact Metallization(접합 금속화) Sintering(소결) RF Transistor(RF 트랜지스터) Barrier Metal(장벽 금속)