SiNx / 고분자 이중층 게이트 유전체를 가진 Zinc 산화물 박막 트랜지스터의 저온 공정에 관한 연구

• 영문명: Study on the Low-temperature process of zinc oxide thin-film transistors with SiNx / Polymer bilayer gate dielectrics
• 발행기관: 한국응용과학기술학회 (구.한국유화학회)
• 저자명: 이호원(Ho Won Lee) 양진우(Jin Woo Yang) 형건우(Gun Woo Hyung) 박재훈(Jae Hoon Park) 구자룡(Ja Ryong Koo) 조이식(Eou Sik Cho) 권상직(Sang Jik Kwon) 김우영(Woo Young Kim) 김영관(Young Kwan Kim)
• 간행물 정보: 『한국응용과학기술학회지』한국유화학회지 제27권 제2호, 137~143쪽, 전체 7쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2009.06.30

영문 초록

Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors(TFTs) based on silicon nitride (SiNx) / cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with SiNx / low-temperature C-PVP or SiNx / conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effec mobility of 0.205 cm2/Vs, a thresholdvoltage of 13.56 V and an on/off ratio of 5.73 x 106. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

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참고문헌

키워드

ZnO transistor Low temperature process C-PVP Flexible substrate ALD