Dependence of O₂ Plasma Treatment of Cross-Linked PVP Insulator on the Electrical Properties of Organic-Inorganic Thin Film Transistors with ZnO Channel Layer

• 발행기관: 한국마이크로전자및패키징학회
• 저자명: Gong, Su-Cheol Shin, Ik-Sup Bang, Suk-Hwan Kim, Hyun-Chul Ryu, Sang-Ouk Jeon, Hyeong-Tag Park, Hyung-Ho Yu, Chong-Hee Chang, Ho-Jung
• 간행물 정보: 『마이크로전자 및 패키징학회지』제16권 제2호, 21~25쪽, 전체 5쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2009.06.30

영문 초록

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, O₂ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 cm²/V·s and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The Ion/off ratio was about 10³ for all samples with O₂ plasma treatment.

목차

1. Introduction

2. Experimental

3. Results and discussion

4. Conclusions

Acknowledgement

References

키워드

Organic-inorganic thin film transistor Cross-linked Poly-4-vinylphenol ZnO Atomic layer deposition O₂ plasma treatment Field effect mobility