펄스 SiH₄플라즈마 화학기상증착 공정에서 입자 성장에 대한 펄스 변조의 영향

• 영문명: Effects of Pulse Modulations on Particle Growth in Pulsed SiH₄ Plasma Chemical Vapor Deposition Process
• 발행기관: 강원대학교 산업기술연구소
• 저자명: 김동주(Kim Dong Joo) 김교선(Kim Kyo Seon)
• 간행물 정보: 『산업기술연구』vol.26, 173~181쪽, 전체 9쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2006.09.30

영문 초록

We analyzed systematically particle growth in the pulsed SiH_4 plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencics, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on (t_(on)), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off (t_(off)), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, t_(on) increases and the large sized particles grow taster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in SiH_(4) PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

목차

Abstract

1. 서론

2. 이론

3. 결과 및 토론

4. 결론

참고문헌

키워드

펄스 변조 입자 하전 입자 충돌 입자 성장 펄스 SiH₄ 플라즈마 공정 Pulse modulation Particle charging Particle coagulation Particle growth Pulsed SiH₄ plasma process