Cu 박막과 SiO₂ 절연막사이의 TaNₓ 박막의 접착 및 확산방지 특성

• 영문명: Adhesion and Diffusion Barrier Properties of TaNₓ Films between Cu and SiO₂
• 발행기관: 한국마이크로전자및패키징학회
• 저자명: 김용철 이도선 이원종
• 간행물 정보: 『마이크로전자 및 패키징학회지』제16권 제3호, 19~24쪽, 전체 6쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2009.09.30

영문 초록

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the TaNₓ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and SiO₂/Si substrate was quantitatively measured by 180° peel test and topple test as a function of the composition of the adhesive TaNₓfilm. As the nitrogen content increased in the adhesive TaNₓfilm, the adhesion strength between Cu and SiO₂/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the TaNₓfilms against Cu diffusion and found that it was improved with increasing nitrogen content in the TaNₓfilm up to N/Ta ratio of 1.4.

목차

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2. 실험 방법

3. 결과 및 고찰

4. 결론

감사의 글

참고문헌

키워드

TSV adhesion diffusion barrier TaN Cu