Deposition of SiCxNy Thin Film as a Membrane Application

• 영문명: Deposition of SiCxNy Thin Film as a Membrane Application
• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제8권 제1호, 39~43쪽, 전체 5쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2001.03.31

영문 초록

SiCxNy film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using SiH_4(5% in Ar), CH₄ and N₂. Ternary phase SiCxNy thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in CH₄flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extremely high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

목차

1. Introduction

2. Experiment

3. Results and Discussion

4. Conclusions

Acknowledgement

References