SiC based Technology for High Power Electronics and Packaging Applications

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제21권 제2호, 71~78쪽, 전체 8쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2014.06.30

영문 초록

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

목차

1. Introduction

2. History and Motivation

3. State-of-the Art of SiC Power Devices

4. Merits of the SiC Technology

5. Power Semiconductor Devices

6. Latest Developments in High Power Devices

7. Summary

References

키워드

SiC Packaging Semiconductor IGBT JFET