Nano-Scale Cu Direct Bonding Technology Using Ultra-High Density, Fine Size Cu Nano-Pillar (CNP) for Exascale 2.5D/3D Integrated System

• 발행기관: 한국마이크로전자및패키징학회
• 저자명: Kang-Wook Lee
• 간행물 정보: 『마이크로전자 및 패키징학회지』제23권 제4호, 69~77쪽, 전체 9쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2016.12.31

영문 초록

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with 80μm height is around 30 m for each pair of 10μm dia. electrode. Capacitance value of CNP bundle with 3μm length and 80μm height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

목차

1. Introduction

2. Novel Hybrid Bonding Technology Based on Nano-scale Cu Direct Bonding Using Ultra-high Density, Fine Size Cu Nano-pillar (CNP)

3. Characterization of Novel Hybrid Bonding Technology Using Ultra-high Density CNP

4. Summary

References

키워드

nano-scale Cu direct bonding Cu nano-pillar esascale 2.5D/3D integration