TSV 기반 3차원 소자의 열적-기계적 신뢰성

• 영문명: Thermo-Mechanical Reliability of TSV based 3D-IC
• 발행기관: 한국마이크로전자및패키징학회
• 저자명: 윤태식 김택수
• 간행물 정보: 『마이크로전자 및 패키징학회지』제24권 제1호, 35~43쪽, 전체 9쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2017.03.31

영문 초록

The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC.

목차

1. 서론

2. 이론적인 접근 및 분석

3. 신뢰성 문제

4. 설계 및 최적화

5. 결론

감사의 글

References

키워드

Through-Silicon-Via Coefficient of Thermal Expansion Thermal conductivity Fracture Reliability