음이온 기반 멤리스터의 최신 기술동향 및 이슈

• 영문명: The Latest Trends and Issues of Anion-based Memristor
• 발행기관: 한국마이크로전자및패키징학회
• 저자명: 이홍섭
• 간행물 정보: 『마이크로전자 및 패키징학회지』제26권 제1호, 1~7쪽, 전체 7쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2019.03.31

영문 초록

Recently, memristor (anion-based memristor) is referred to as the fourth circuit element which resistance state can be gradually changed by the electric pulse signals that have been applied to it. And the stored information in a memristor is non-volatile and also the resistance of a memristor can vary, through intermediate states, between high and low resistance states, by tuning the voltage and current. Therefore the memristor can be applied for analogue memory and/or learning device. Usually, memristive behavior is easily observed in the most transition metal oxide system, and it is explained by electrochemical migration motion of anion with electric field, electron scattering and joule heating. This paper reports the latest trends and issues of anion-based memristor.

목차

1. Introduction

2. Anion-based memristor

3. Analog characteristic and the new application of memristor

4. Latest trend of memristor

5. Conclusion

Acknowledgement

References

키워드

Memristor Analog memory Crossbar array architecture Sneak current Linearity