WBG 전력반도체 최신 기술 및 동향

• 영문명: High Technology and Latest Trends of WBG Power Semiconductors
• 발행기관: 한국마이크로전자및패키징학회
• 저자명: 이정현 정도현 오승진 정재필
• 간행물 정보: 『마이크로전자 및 패키징학회지』제25권 제4호, 17~23쪽, 전체 7쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2018.12.31

영문 초록

Recently, electric semiconductors became an issue because of efficient use of energy and compaction of electronics. Silicon electric semiconductors are difficult to put into it because of its physical limitations. Hence, the study of WBG (Wideband Gap) semiconductors like SiC and GaN began. These devices received attention because it can be miniaturized and worked at high temperatures over $300^{\circ}C$ 수식 이미지. WBG MOSFET electric semiconductors can show performance like silicon IGBT. This can solve the current problem of IGBT tail. The current study shows the technical principles and issues related to SiC and GaN power semiconductors. WBG devices can achieve high performance compared to silicon, but its performance can't be fully utilized because of lack in bonding technology. Therefore, this review introduces research on WBG devices and their packaging issues.

목차

1. 서론

2. WBG 전력반도체의 특성

3. 전력반도체의 기술 동향

4. 전력반도체의 신뢰성

5. WBG 소자의 전망

6. 결론

감사의 글

References

키워드

WBG SiC GaN Power semiconductor Power module