전계발광 소자에서 정공 차단 물질로서의 4,4 ,4 -trifluoro-triazine의 특성

• 영문명: The Characteristices of the 4,4 ,4 -trifluoro-triazine as a hole Blocking Material in Electroluminescent Devices
• 발행기관: 한국응용과학기술학회 (구.한국유화학회)
• 저자명: 신지원(Ji Won Shin) 신동명(Dong Myung Shin) 손병청(Byoung Chung Sohn)
• 간행물 정보: 『한국응용과학기술학회지』한국유화학회지 제17권 제2호, 120~125쪽, 전체 6쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2000.06.30

영문 초록

The tfTZ(4,4 ,4 -trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

목차

Abstract

Ⅰ. 서론

Ⅱ. 실험방법

Ⅲ. 결과 및 고찰

Ⅳ. 결론

참고문헌