분자선 에피탁시법으로 성장한 Te 도핑된 GaSb 박막의 전기적 특성

• 영문명: Electrical transport properties of GaSb:Te films grown by Molecular Beam Epitaxy
• 발행기관: 한국항해항만학회
• 저자명: Aung Khaing Nyi, 김시영(Si Young Kim) 이웅(Woong Lee) 오승준(Seungjun Oh) 정미나(Mina Jung) 박승환(Seunghwan Park) 오동철(Dong-cheol Oh) 이상태(Sang Tae Lee) 조영래(Young Rae Cho) 장지호(Ji Ho Chang) 이홍찬(Hong Chan Lee)
• 간행물 정보: 『한국항해항만학회 학술대회논문집』2008년도 공동학술대회 지구환경변화와 해양산업의 전망 논문집, 331~333쪽, 전체 3쪽
• 주제분류: 공학 > 해양공학
• 파일형태: PDF
• 발행일자: 2008.06.30

영문 초록

The electrical properties of GaSb films were investigated. Electrical properties were measured by Hal1 measurements with Van der Pauw configuration and performed in the temperature range from 10 to 300K. Te doped GaSb layers (with/without ZnTe buffer) were grown by molecular beam epitaxy. The experimental results are compared to the theory, Brooks-Herring scattering theory, based on the two-layer Hal1 effect model. We considered the four major scattering mechanisms effects. The role of ZnTe buffer to the electrical properties is discussed.

목차

Abstract

1. Introduction

2. Experiment

3. Result & Discussion

4. Conclusion

References

Acknowledgement

키워드

GaSb Te doped MBE ZnTe Hall measurement scattering mechanism