Effect of Localized Recrystallization Distribution on Edgebond and Underfilm Applied Wafer-level Chip-scale Package Thermal Cycling Performance

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제22권 제1호, 27~34쪽, 전체 8쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2015.03.31

영문 초록

The correlation between crack propagation and localized recrystallization are compared in a series of cross section analyses on thermal cycled edgebond and underfilm material applied wafer level chip scale package (WLCSP) components with a baseline of no-material applied WLCSP components. The results show that the crack propagation distribution and recrystallization region correlation can explain potential degradation mechanisms and support the damage accumulation history in a more efficient way. Edgebond material applied components show a shift of damage accumulation to a more localized region, thus potentially accelerated the degradation during thermal cycling. Underfilm material applied components triggered more solder joints for a more wider distribution of damage accumulation resulting in a slightly improved thermal cycling performance compared to no-material applied components. Using an analysis on localized distribution of recrystallized areas inside the solder joint showed potential value as a new analytical approach.

목차

1. Introduction

2. Experimental Procedure

3. Results and Discussion

4. Conclusions

References

키워드

solder thermal cycling edgebond underfilm recrystallization grain structure microstructure