有限要素法에 의한 半導體 素子 解析의 安定化에 관한 硏究

• 영문명: On the development of succesive finite element code for semiconductor devices analysis
• 발행기관: 강원대학교 산업기술연구소
• 저자명: Choi Kyung(崔炅)
• 간행물 정보: 『산업기술연구』vol.9, 109~117쪽, 전체 9쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 1989.09.30

영문 초록

In the finite element analysis of semiconductor devices analysis, the solution often be diverged due to the numerical instability of discretized equations. To overcome this problems, a noble finite element code which guarantees a successful convergence is developed. The factor of divergence in the current continuity equation of semiconductor governing equations is derived using stability test and an adaptive mesh refine scheme is introduced to eliminates the divergence properties. A test calculation of GaAs MESFET model reveals that the proposed scheme has a robust self-convergence property and is suitable for the semiconductor devices analysis.

목차

ABSTRACT

1. 序論

2. 半導體 有限要素 方程式

3. 有限要素解의 安定性 檢査

4. 適用事例

5. 結論

REFERENCE