Low-k 웨이퍼 레이저 인그레이빙 특성에 관한 연구

• 영문명: Study on low-k wafer engraving processes by using UV pico-second laser
• 발행기관: 한국레이저가공학회
• 저자명: 남기중(Gi-jung Nam) 문성욱(Seong-wook Moon) 홍윤석(Yoon-seok Hong) 배한성(Han-seong Bae) 곽노홍(No-Heung Kwak)
• 간행물 정보: 『한국레이저가공학회 학술대회 논문집』2006년도 추계학술발표대회 논문집, 128~132쪽, 전체 5쪽
• 주제분류: 공학 > 기계공학
• 파일형태: PDF
• 발행일자: 2006.11.01

영문 초록

  Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355㎚ and 80㎒, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow rate, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repetition rate in the range of ㎑. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than 20㎛ and 10㎛ at more than 500㎜/sec work speed. respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed of laser material process.

목차

ABSTRACT
1. 서론
2. 실험 장치 및 방법
3. 실험 결과 및 고찰
4. 결론
후기
참고문헌

키워드

UV pico-second laser Low-k wafer Wafer cutting Laser engraving free debris Kerf edge