표면 산화 실리카 차폐층을 통한 블록 공중합체 패턴의 식각 선택성 및 패턴 정밀도 향상

• 영문명: Facile Enhancement of Etching Selectivity in Block Copolymer Patterns via Surface-Localized SiO₂ Shielding Layer
• 발행기관: 한국세라믹학회
• 저자명: 송경민(Kyeong Min Song)
• 간행물 정보: 『세라미스트』제28권 제3호, 547~557쪽, 전체 11쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2025.09.30

국문 초록

Block copolymer (BCP) self-assembly offers a scalable route for nanoscale patterning in electronic and optical devices. However, conventional BCP systems like Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) often face challenges in achieving high aspect ratio patterns due to limited etching selectivity and pattern instability during dry etching. In this study, we introduce a simple strategy to enhance etching selectivity by blending a small amount of PS-b-PDMS into Polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) films. Thermal annealing induces PS-b-PDMS migration to PS domains, forming a surface-localized shielding layer. During plasma etching, this layer is converted into an inorganic SiO2 layer, improving plasma resistance. This approach increases etch depth by∼25% while maintaining perpendicular lamellar alignment. Importantly, it does not require complex processing steps such as solvent annealing or surface modification. The strategy provides a practical and scalable method to achieve high-fidelity, high aspect ratio nanopatterns with enhanced etching performance suitable for large-area applications.

목차

1. 서론

2. 실험 방법

3. 결과 및 고찰

4. 결론

CONFLICTS OF INTEREST

REFERENCES

키워드

Bock copolymer Dry etching High aspect ratio Self-assembly Silicon oxide

참고문헌

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