- 영문명
- Optimization of High Electron Mobility Barium Stannate Thin Film Deposition and Development of Thermal Treatment for Electron Mobility Maximizatio
- 발행기관
- 한국세라믹학회
- 저자명
- 윤다섭(Daseob Yoon)
- 간행물 정보
- 『세라미스트』제28권 제1호, 92~105쪽, 전체 14쪽
- 주제분류
- 공학 > 화학공학
- 파일형태
- 발행일자
- 2025.03.31

국문 초록
Using pulsed laser deposition, the synthesis of epitaxial La-doped BaSnO₃ (LBSO) thin films was optimized by controlling plasma plume dynamics with parameters such as pressure, laser energy, and target-substrate distance. This allowed precise tuning of the Ba/Sn ratio, ultimately leading to LBSO films with high electron mobility and carrier density. During post-growth hydrogen annealing, precise control of oxygen partial pressure and temperature simultaneously increased electron density and mobility, achieving a room-temperature mobility of 130 cm V⁻ s⁻ . While hydrogen annealing could potentially reduce mobility due to charged oxygen vacancies, careful regulation of oxygen partial pressure increased the electron mobility significantly. This improvement was primarily attributed to oxygen-vacancy-assisted recovery in the ionic lattice, which induces reduced threading dislocation density and crystal mosaicity. Furthermore, this research provided a comprehensive guideline for defect engineering through thermal treatment. While reducing conditions improved crystallinity and mobility, they also induced Sn vacancy formation, which strongly trapped free electrons. Therefore, slightly Sn-excess LBSO films were found to be optimal for maximizing room-temperature mobility after hydrogen annealing. This study utilized LBSO thin films as a model system to explore defect control during synthesis and post-treatment, investigating the correlation between defect engineering and electronic properties. The findings highlight that thermodynamic defect control strategies during film deposition and annealing can offer new pathways to enhance room-temperature electron mobility in epitaxial oxide thin films.
영문 초록
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