국문 초록
영문 초록
With the advent of the 4th industrial revolution era, there has been a high demand for high-performance electronic devices capable of collecting, storing, and calculating vast amounts of data. Vanadium dioxide (VO₂) is considered an attractive candidate for next-generation electronic devices as a prototypical strongly correlated material exhibiting a metal-insulator transition (MIT) accompanied by huge electrical resistivity changes in a few nanoseconds. The nonvolatile control of the MIT in VO₂ has recently been the subject of intensive research. In this report, we review recent advancements in the field of nonvolatile control of MIT in VO₂, using electrochemical redox reactions, inverse piezoelectric effect, and ferroelectric polarization, and their potential to develop high-performance next-generation electronic devices.
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