- 영문명
- A study on the SiC Mk> devices for U V sensor applications
- 발행기관
- 호서대학교 공업기술연구소
- 저자명
- 구경완(Kyung一Wan Koo) 정순원(Soon一Won Jung)
- 간행물 정보
- 『공업기술연구 논문집』제25권 제1호, 191~198쪽, 전체 8쪽
- 주제분류
- 공학 > 제어계측공학
- 파일형태
- 발행일자
- 2006.06.30

국문 초록
영문 초록
In this paper, we propose aluminum nitride(AlN) thin film as gate insulating material instead of SiC )2 on 6H~SiC MIS devices. For quite a low lattice misfit with SiC, AIN is as attractive as new gate insulating material in SiC devices. The fabrication of aluminium nitride (AIN) films directly on 6 H-S 1 ᄂ(0001) substrates by reactive magnetron sputtering method has been performed with rapid thermal annealing at a temperature range 01 ZOO 1000 °C in nitrogen ambient for enhancement of crystallization of films. The structural properties of AIN films on 6H-SiC(0001) by RTA analysed by XRD(X-Ray diffraction). The A1N(0002) peaks was clearly found. The dielectric constant of deposited films was obtained as around 8.4 from the accumulation region of capacitance-voltage curve. It is almost the same value with the bulk AIN. Also, the gate leakage current density of the MIS capacitor was 10 9 A/cm2 order within the electric field of 2 MV/cm. The amount of Djt was evaluated as about 5X1010 eV_1cm at a location of 0.5 eV from the midgap.
목차
I ■ 서 론
n. 실험 방법
m . 결고ᅡ 및 고찰
IV. 결 론
해당간행물 수록 논문
참고문헌
최근 이용한 논문
교보eBook 첫 방문을 환영 합니다!
신규가입 혜택 지급이 완료 되었습니다.
바로 사용 가능한 교보e캐시 1,000원 (유효기간 7일)
지금 바로 교보eBook의 다양한 콘텐츠를 이용해 보세요!
