ESD

Steven H. Voldman 지음

Wiley 2015년 04월 24일 출간

작품소개

책소개

ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies. New features in the 2nd edition: Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs. Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS. Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications Illustrates the influence of analog design practices on ESD design circuitry, from integration, synthesis and layout, to symmetry, matching, inter-digitation, and common centroid techniques. Increased emphasis on system-level testing conforming to IEC 61000-4-2 and IEC 61000-4-5. Improved coverage of low-capacitance ESD, scaling of devices and oxide scaling challenges. ESD: Circuits and Devices 2nd Edition is an essential reference to ESD, circuit & semiconductor engineers and quality, reliability &analysis engineers. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, microelectronics and IC design.

목차

About the Author xixPreface xxiAcknowledgments xxv1 Electrostatic Discharge 11.1 Electricity and Electrostatic Discharge 11.2 Fundamental Concepts of ESD Design 111.3 ESD, EOS, EMI, Electromagnetic Compatibility, and Latchup 181.4 ESD Models 191.5 ESD and System-Level Test Models 281.6 Time Constants 391.7 Capacitance, Resistance, and Inductance and ESD 591.8 Rules of Thumb and ESD 621.9 ESD Scaling 631.10 Lumped versus Distributed Analysis and ESD 651.11 ESD Metrics: Chip-Level ESD Metrics and Figures of Merit 791.12 ESD Quality and Reliability Business Metrics 841.13 Twelve Steps to Building an ESD Strategy 851.14 Summary and Closing Comments 86Problems 87References 872 Design Synthesis 942.1 Synthesis and Architecture of a Semiconductor Chip for ESD Protection 942.2 Electrical and Spatial Connectivity 952.3 ESD, Latchup, and Noise 962.4 Interface Circuits and ESD Elements 982.5 ESD Power Clamp Networks 1012.6 ESD Rail-to-Rail Networks 1052.7 Guard Rings 1092.8 Pads, Floating Pads, and No-connect Pads 1112.9 Structures under Bond Pads 1122.10 Mixed Signal Architecture: CMOS 1122.11 MS Architecture: Digital, Analog, and RF Architecture 1162.12 Digital-to-Analog Interdomain Signal Line Failures 1182.13 Summary and Closing Comments 124Problems 124References 1253 MOSFET ESD Design 1293.1 Basic ESD Design Concepts 1293.2 ESD MOSFET Design: Channel Length 1363.3 N-Channel MOSFET Design: Channel Width 1433.4 ESD MOSFET Design: Contacts 1443.5 E

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저자(글) Steven H. Voldman

Dr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge (ESD) for “Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.” Voldman was a member of the semiconductor development of IBM, Qimonda, and Intersil and worked as a full time consultant for Taiwan Semiconductor Manufacturing Corporation (TSMC) and a consultant on latchup, for the Samsung Electronics Corporation. He initiated the “ESD on Campus” program which was established to bring ESD lectures and interaction to university faculty and students internationally reaching over 40 universities in the United States, Korea, Singapore, Taiwan, Malaysia, Philippines, Thailand, India, China and Senegal. He is a recipient of 252 issued US patents and has written over 150 technical papers. He has served as an expert witness in patent litigation; and has also founded a limited liability corporation (LLC) consulting business supporting patents, patent writing and patent litigation. Steven Voldman provides tutorials and lectures on inventions, innovations, and patents. Dr. Voldman is an author of the book series including ESD: Physics and Devices, ESD: Circuits and Devices, 2nd Edition of ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, Latchup, ESD: Failure Mechanisms and Models, ESD: Design and Synthesis, ESD Basics: From Semiconductor Manufacturing to Product Use, and Electrical Overstress (EOS): Devices, Circuits and Systems, ESD: Analog Circuits and Design,, as well as a contributor to the book Silicon Germanium: Technology, Modeling and Design andNanoelectronics: Nanowires, Molecular Electronics, and Nano-devices. In addition, the International Chinese editions of booksare also released.