Semiconductor Material and Device Characterization

Dieter K. Schroder 지음

Wiley-Interscience 2006년 02월 10일 출간

작품소개

책소개

This Third Edition updates a landmark text with the latest findingsThe Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the materialIn addition, readers will find fully updated and revised sections in each chapter.Plus, two new chapters have been added:Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.Written by an internationally recognized authority in the fiel

목차

Preface to Third Edition.1 Resistivity.1.1 Introduction.1.2 Two-Point Versus Four-Point Probe.1.3 Wafer Mapping.1.4 Resistivity Profiling.1.5 Contactless Methods.1.6 Conductivity Type.1.7 Strengths and Weaknesses.Appendix 1.1 Resistivity as a Function of Doping Density.Appendix 1.2 Intrinsic Carrier Density.References.Problems.Review Questions.2 Carrier and Doping Density.2.1 Introduction.2.2 Capacitance-Voltage (C-V).2.3 Current-Voltage (I-V).2.4 Measurement Errors and Precautions.2.5 Hall Effect.2.6 Optical Techniques.2.7 Secondary Ion Mass Spectrometry (SIMS).2.8 Rutherford Backscattering (RBS).2.9 Lateral Profiling.2.10 Strengths and Weaknesses.Appendix 2.1 Parallel or Series Connection?Appendix 2.2 Circuit Conversion.References.Problems.Review Questions.3 Contact Resistance and Schottky Barriers.3.1 Introduction.3.2 Metal-Semiconductor Contacts.3.3 Contact Resistance.3.4 Measurement Techniques.3.5 Schottky Barrier Height.3.6 Comparison of Methods.3.7 Strengths and Weaknesses.Appendix 3.1 Effect of Parasitic Resistance.Appendix 3.2 Alloys for Contacts to Semiconductors.References.Problems.Review Questions.4 Series Resistance, Channel Length and Width, and Threshold Voltage.4.1 Introduction.4.2 PN Junction Diodes.4.3 Schottky Barrier Diodes.4.4 Solar Cells.4.5 Bipolar Junction Transistors.4.6 MOSFETS.4.7 MESFETS and MODFETS.4.8 Threshold Voltage.4.9 Pseudo MOSFET.4.10 Strengths and Weaknesses.Appendix 4.1 Schottky Diode Current-Voltage Equation.References.Problems.Review Questions.5 Defects.5.1 Introduction.5.2 Generation-Recombination Statistics.5.3 Capacitance Measurements.5.4 Current Measurements.5.5 Charge Measurements.5.6 Deep-Level Transient Spe

출판사 서평

"I strongly recommend this book for those who want to learn device characterization." (IEEE Circuits Devices Magazine, November/December 2006)

작가정보

저자(글) Dieter K. Schroder

저자 :

저자 :

저자 :

저자 :

저자 :
저자 :
저자 :
DIETER K. SCHRODER, PhD, is Professor, Department of Electrical Engineering, Arizona State University. He is a recipient of the ASU College of Engineering Teaching Excellence Award and several other teaching awards. In addition to Semiconductor Material and Device Characterization, Dr. Schroder is the author of Advanced MOS Devices.