ESD

Steven H. Voldman 지음

Wiley 2006년 11월 02일 출간

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책소개

With the growth of high-speed telecommunications and wireless technology, it is becoming increasingly important for engineers to understand radio frequency (RF) applications and their sensitivity to electrostatic discharge (ESD) phenomena. This enables the development of ESD design methods for RF technology,leading to increased protection against electrical overstress (EOS) and ESD.ESD: RF Technology and Circuits:Presents methods for co-synthesizisng ESD networks for RF applications to achieve improved performance and ESD protection of semiconductor chips;discusses RF ESD design methods of capacitance load transformation, matching network co-synthesis, capacitance shunts, inductive shunts, impedance isolation, load cancellation methods, distributed loads, emitter degeneration, buffering and ballasting;examines ESD protection and design of active and passive elements in RF complementary metal-oxide-semiconductor (CMOS), RF laterally-diffused metal oxide semiconductor (LDMOS), RF BiCMOS Silicon Germanium (SiGe), RF BiCMOS Silicon Germanium Carbon (SiGeC), and Gallim Arsenide technology;gives information on RF ESD testing methodologies, RF degradation effects, and failure mechanisms for devices, circuits and systems;highlights RF ESD mixed-signal design integration of digital, analog and RF circuitry;sets out examples of RF ESD design computer aided design methodologies;covers state-of-the-art RF ESD input circuits, as well as voltage-triggered to RC-triggered ESD power clamps networks in RF technologies, as well as off-chip protection concepts.Following the authors series of books on ESD, this book will be a thorough overview of ESD in RF technology for RF semiconductor chip and ESD engineers. Device and circuit engineers working in the RF domain, and quality, reliability and failure analysis engineers will also find it a valuable reference in

목차

Preface.Acknowledgments.Chapter 1. RF DESIGN and ESD.1.1 Fundamental Concepts of ESD design.1.2 Fundamental Concepts of RF ESD Design.1.3 Key RF ESD Contributions.1.4 Key RF ESD Patents.1.5 ESD Failure Mechanisms.1.6 RF Basics.1.7 Two-Port Network Parameters.1.8. Stability: RF Design Stability and ESD.1.9 Device Degradation and ESD Failure.1.10 RF ESD Testing.1.11 Time Domain Reflection (TDR) and Impedance Methodology.1.12 Product Level ESD Test and RF Functional Parameter Failure.1.13 Combined RF and ESD TLP Test Systems.1.14 Closing Comments and Summary.Problems.References.Chapter 2. RF ESD Design.2.1 ESD Design Methods: Ideal ESD networks and RF.2.2 RF ESD Design Methods: Linearity.2.3 RF ESD Design: Passive Element Quality Factors and Figures of Merit.2.4 RF ESD Design Methods: Method of Subsitution.2.5 RF ESD Design Methods: Matching Networks and RF ESD Networks.2.6 RF ESD Design Methods: Inductive Shunt.2.7 RF ESD Design Methods: Cancellation Method.2.8 RF ESD Design Methods: Impedance Isolation Technique Using.2.9 RF ESD Design Methods: Lumped versus Distributed Loads.2.10 ESD RF Design Synthesis and Floor Planning: RF, Analog, and Digital Integration.2.11 ESD Circuits and RF Bond Pad Integration.2.12 ESD Structures Under Wire Bond Pads.2.13 Summary and Closing Comments.Problems.References.Chapter 3. RF CMOS and ESD.3.1 RF CMOS: ESD Device Comparisons.3.2 Circular RF ESD Devices.3.3 RF ESD Design&-ESD Wiring Design.3.4 RF Passives: ESD and Schottky Barrier Diodes.3.5 RF Passives: ESD and Inductors.3.6 RF Passives: ESD and Capacitors.3.7 Summary and Closing Comments.Problems.References.Chapter 4. RF CMOS ESD Networks.4.1 RF CMOS Input Circuits.4.2 RF CMOS: Diode&~Inductor ESD Networks.4.3 RF CMOS Impedance Isolation LC Resonator ESD Networks.4.4 RF CMOS LNA ESD Design.4.5 RF CMOS T-Coil Inductor ESD Inp

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저자(글) Steven H. Voldman